| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28LV256JC-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | PLCC | 32 | 0°C | 70°C | 41 K |
| 28LV256JC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | PLCC | 32 | 0°C | 70°C | 41 K |
| 28LV256JC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | distributor | PLCC | 32 | 0°C | 70°C | 41 K |
| 28LV256JC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | distributor | PLCC | 32 | 0°C | 70°C | 41 K |
| 28LV256JI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | PLCC | 32 | -40°C | 85°C | 41 K |
| 28LV256JI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | PLCC | 32 | -40°C | 85°C | 41 K |
| 28LV256JI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | distributor | PLCC | 32 | -40°C | 85°C | 41 K |
| BS62UV256DC | 150ns 10-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 32K x 8bit | distributor | DICE | 28 | 0°C | 70°C | 331 K |
| BS62UV256DI | 150ns 10-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 32K x 8bit | distributor | DICE | 28 | -40°C | 85°C | 331 K |
| BS62UV256JC | 150ns 10-20mA 1.8-3.6V ultra low power/voltage CMOS SRAM 32K x 8bit | distributor | SOJ | 28 | 0°C | 70°C | 331 K |
| << [72] [73] [74] [75] [76] 77 [78] [79] [80] [81] [82] >> |
|---|
