| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28LV256TC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | 0°C | 70°C | 41 K |
| 28LV256TC-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | distributor | TSOP | 28 | 0°C | 70°C | 41 K |
| 28LV256TC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | distributor | TSOP | 28 | 0°C | 70°C | 41 K |
| 28LV256TI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28LV256TI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28LV256TI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28LV256TI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | distributor | TSOP | 28 | -40°C | 85°C | 41 K |
| 28LV256TM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
| 28LV256TM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
| 28LV256TM-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | distributor | TSOP | 28 | -55°C | 125°C | 41 K |
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