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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M2V28S40ATP-6L128M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C626 K
M2V28S40ATP-7128M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C626 K
M2V28S40ATP-7L128M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C626 K
M2V28S40ATP-8128M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C626 K
M2V28S40ATP-8L128M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C626 K
P2V28S20ATP-7128 Mb SDRAM (4-bank x 8.388.608-word x 4-bit)distributorTSOP540°C70°C652 K
P2V28S20ATP-75128 Mb SDRAM (4-bank x 8.388.608-word x 4-bit)distributorTSOP540°C70°C652 K
P2V28S20ATP-8128 Mb SDRAM (4-bank x 8.388.608-word x 4-bit)distributorTSOP540°C70°C652 K
P2V28S30ATP-8128 Mb SDRAM (4-bank x 4.194.304-word x 8-bit)distributorTSOP540°C70°C652 K
R1250V281A-E2Negative output charge pump regulator (100mA). Output voltage -2.8V. L active type of chip enable circuit. Packing type E2distributorTSSOP8-40°C85°C159 K
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