| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BYV4100 | Fast soft-recovery controlled avalanche rectifier. Repetitive peak reverse voltage 100 V. | Philips-Semiconductors | SOD64 | 2 | -65°C | 175°C | 73 K |
| BYV4100 | Fast soft-recovery controlled avalanche rectifier. Repetitive peak reverse voltage 100 V. | Philips-Semiconductors | SOD64 | 2 | -65°C | 175°C | 73 K |
| KM416V4104BS-45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 806 K |
| KM416V4104BS-5 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 806 K |
| KM416V4104BS-6 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 806 K |
| KM416V4104BSL-45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 806 K |
| KM416V4104BSL-5 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 806 K |
| KM416V4104BSL-6 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 806 K |
| KM416V4104CS-L50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 808 K |
| KM416V4104CS-L60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 808 K |
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