Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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M2V64S40DTP-7L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 427 K |
M2V64S40DTP-8 | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 427 K |
M2V64S40DTP-8L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 427 K |
MH16V6445BWJ-5 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 127 K |
MH16V6445BWJ-6 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 127 K |
MH16V645BWJ-5 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 127 K |
MH4V6445BXJJ-5 | 268435456-bit (4194304-word by 64-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | - | 0°C | 70°C | 152 K |
MH4V6445BXJJ-5S | 268435456-bit (4194304-word by 64-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | - | 0°C | 70°C | 152 K |
MH4V6445BXJJ-6 | 268435456-bit (4194304-word by 64-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | - | 0°C | 70°C | 152 K |
MH4V6445BXJJ-6S | 268435456-bit (4194304-word by 64-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | - | 0°C | 70°C | 152 K |
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