| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| M5M4V64S20ATP-12 | 64M (4-bank x 4194304-word x 4-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 1 M |
| MGFC38V6472 | 6.4-7.2GHz band 6W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 93 K |
| MGFC40V6472A | 6.4-7.2GHz band 10W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 102 K |
| MGFC42V6472A | 6.4-7.2GHz band 16W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 83 K |
| MGFC44V6472 | 6.4-7.2GHz band 24W internally matched GaAs FET | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | - | - | 93 K |
| MH16V64AWJ-5 | Fast page mode 1073741824 (16,777,216- word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 168 | 0°C | 70°C | 186 K |
| MH16V64AWJ-6 | Fast page mode 1073741824 (16,777,216- word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 168 | 0°C | 70°C | 186 K |
| MH8V6445BWZJ-6 | 536870912-bit (8388608-word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 121 K |
| MH8V644AWZJ-5 | Fast page mode 536870912-bit (8388608- word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 174 K |
| MH8V644AWZJ-6 | Fast page mode 536870912-bit (8388608- word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 174 K |
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