| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28LV64JC-3 | Speed: 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PLCC | 32 | 0°C | 70°C | 42 K |
| 28LV64JC-4 | Speed: 250 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PLCC | 32 | 0°C | 70°C | 42 K |
| 28LV64JC-5 | Speed: 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PLCC | 32 | 0°C | 70°C | 42 K |
| 28LV64JC-6 | Speed: 400 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PLCC | 32 | 0°C | 70°C | 42 K |
| 28LV64JI-5 | Speed: 300 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PLCC | 32 | -40°C | 85°C | 42 K |
| 28LV64JI-6 | Speed: 400 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | PLCC | 32 | -40°C | 85°C | 42 K |
| MH8V64AWZJ-6 | 536870912-bit (8388608-word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 174 K |
| NT5SV64M4AT-75B | 256Mb synchronous DRAM; 64Mx4 | distributor | TSOP | 54 | 0°C | 70°C | 863 K |
| NT5SV64M4AT-7K | 256Mb synchronous DRAM; 64Mx4 | distributor | TSOP | 54 | 0°C | 70°C | 863 K |
| NT5SV64M4AT-8B | 256Mb synchronous DRAM; 64Mx4 | distributor | TSOP | 54 | 0°C | 70°C | 863 K |
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