Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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28LV64JC-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | PLCC | 32 | 0°C | 70°C | 42 K |
BDV64A | 80 V, PNP silicon power darlington | distributor | SOT | 3 | -65°C | 150°C | 643 K |
BDV64B | 100 V, PNP silicon power darlington | distributor | SOT | 3 | -65°C | 150°C | 643 K |
BDV64C | 120 V, PNP silicon power darlington | distributor | SOT | 3 | -65°C | 150°C | 643 K |
MT46V64M8TG-75 | 32Meg x 4 x 4banks, CL=2.5, 133MHz double data rate (DDR) SDRAM | distributor | TSOP | 66 | 0°C | 70°C | 2 M |
MT46V64M8TG-75L | 32Meg x 4 x 4banks, CL=2.5, 133MHz double data rate (DDR) SDRAM | distributor | TSOP | 66 | 0°C | 70°C | 2 M |
MT46V64M8TG-75Z | 32Meg x 4 x 4banks, CL=2, 133MHz double data rate (DDR) SDRAM | distributor | TSOP | 66 | 0°C | 70°C | 2 M |
MT46V64M8TG-75ZL | 32Meg x 4 x 4banks, CL=2, 133MHz double data rate (DDR) SDRAM | distributor | TSOP | 66 | 0°C | 70°C | 2 M |
MT46V64M8TG-8 | 32Meg x 4 x 4banks, CL=2, 100MHz double data rate (DDR) SDRAM | distributor | TSOP | 66 | 0°C | 70°C | 2 M |
MT46V64M8TG-8L | 32Meg x 4 x 4banks, CL=2, 100MHz double data rate (DDR) SDRAM | distributor | TSOP | 66 | 0°C | 70°C | 2 M |
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