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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
G17VDS-DC12Relay. Nominal voltage 12VDC. Resistance(+-10%) 130W. Contact material AbMeO2. Contact arrangement: 1 form V. Dust cover.distributor-5-40°C85°C63 K
G17VDS-DC6Relay. Nominal voltage 6VDC. Resistance(+-10%) 28W. Contact material AbMeO2. Contact arrangement: 1 form V. Dust cover.distributor-5-40°C85°C63 K
VDS4616A4A-5200 Mhz LVTTL synchronous DRAM, 512 K x 16 bit x 2 banksdistributorTSOP500°C70°C542 K
VDS4616A4A-6166 Mhz LVTTL synchronous DRAM, 512 K x 16 bit x 2 banksdistributorTSOP500°C70°C542 K
VDS4616A4A-7143 Mhz LVTTL synchronous DRAM, 512 K x 16 bit x 2 banksdistributorTSOP500°C70°C542 K
VDS6632A4A-5200 Mhz LVTTL synchronous DRAM, 512 K x 32 bit x 4 banksdistributorTSOP860°C70°C648 K
VDS6632A4A-5.5183 Mhz LVTTL synchronous DRAM, 512 K x 32 bit x 4 banksdistributorTSOP860°C70°C648 K
VDS6632A4A-6166 Mhz LVTTL synchronous DRAM, 512 K x 32 bit x 4 banksdistributorTSOP860°C70°C648 K
VDS7616A4A-6166 Mhz LVTTL synchronous DRAM, 2 M x 16 bit x 4 banksdistributorTSOP540°C70°C576 K
VDS7616A4A-7143 Mhz LVTTL synchronous DRAM, 2 M x 16 bit x 4 banksdistributorTSOP540°C70°C576 K
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