Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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G17VDS-DC12 | Relay. Nominal voltage 12VDC. Resistance(+-10%) 130W. Contact material AbMeO2. Contact arrangement: 1 form V. Dust cover. | distributor | - | 5 | -40°C | 85°C | 63 K |
G17VDS-DC6 | Relay. Nominal voltage 6VDC. Resistance(+-10%) 28W. Contact material AbMeO2. Contact arrangement: 1 form V. Dust cover. | distributor | - | 5 | -40°C | 85°C | 63 K |
VDS4616A4A-5 | 200 Mhz LVTTL synchronous DRAM, 512 K x 16 bit x 2 banks | distributor | TSOP | 50 | 0°C | 70°C | 542 K |
VDS4616A4A-6 | 166 Mhz LVTTL synchronous DRAM, 512 K x 16 bit x 2 banks | distributor | TSOP | 50 | 0°C | 70°C | 542 K |
VDS4616A4A-7 | 143 Mhz LVTTL synchronous DRAM, 512 K x 16 bit x 2 banks | distributor | TSOP | 50 | 0°C | 70°C | 542 K |
VDS6632A4A-5 | 200 Mhz LVTTL synchronous DRAM, 512 K x 32 bit x 4 banks | distributor | TSOP | 86 | 0°C | 70°C | 648 K |
VDS6632A4A-5.5 | 183 Mhz LVTTL synchronous DRAM, 512 K x 32 bit x 4 banks | distributor | TSOP | 86 | 0°C | 70°C | 648 K |
VDS6632A4A-6 | 166 Mhz LVTTL synchronous DRAM, 512 K x 32 bit x 4 banks | distributor | TSOP | 86 | 0°C | 70°C | 648 K |
VDS7616A4A-6 | 166 Mhz LVTTL synchronous DRAM, 2 M x 16 bit x 4 banks | distributor | TSOP | 54 | 0°C | 70°C | 576 K |
VDS7616A4A-7 | 143 Mhz LVTTL synchronous DRAM, 2 M x 16 bit x 4 banks | distributor | TSOP | 54 | 0°C | 70°C | 576 K |
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