| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 30KW108A | 108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 166 K |
| LC35W1000BM-10U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BM-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| PHW10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHW10N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 115 K |
| PHW10N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 115 K |
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