| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUW1015 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 206 K |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
| M29W102BB50NZ6T | 1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 50ns | SGS-Thomson-Microelectronics | TSOP | 40 | -40°C | 85°C | 154 K |
| M29W102BT50NZ6T | 1 Mbit (64Kb x16, boot block) low voltage single supply flash memory, Vcc = 2.7 to 3.6V, 50ns | SGS-Thomson-Microelectronics | TSOP | 40 | -40°C | 85°C | 154 K |
| SGW10N60RUF | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 541 K |
| SGW10N60RUFD | Short Circuit Rated IGBT | Fairchild-Semiconductor | - | - | - | - | 596 K |
| SSW10N60B | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 686 K |
| STW10NC70Z | N-CHANNEL 700V 0.58OHM 10.6A TO-247 ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 249 K |
| STW10NK60Z | N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 684 K |
| STW10NK80Z | N-CHANNEL 800V - 0.78 OHM - 9A TO-220/TO-220FP/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 458 K |
| << [7] [8] [9] [10] [11] 12 [13] [14] |
|---|
