| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2W10G | 2.0 Ampere Glass Passivated Bridge Rectifiers | Fairchild-Semiconductor | - | - | - | - | 30 K |
| BAW100 | Silicon switching diode array | Infineon-formely-Siemens | - | 4 | - | - | 101 K |
| BAW101 | Silicon switching diode array | Infineon-formely-Siemens | - | 4 | - | - | 61 K |
| FW103 | P-channel silicon MOSFET, ultrahigh-speed switching application | SANYO-Electric-Co--Ltd- | SOP8 | 8 | - | - | 45 K |
| M36W108AB | 8 MBIT (1MB X8, BOOT BLOCK) FLASH MEMORY AND 1 MBIT (128KB X8) SRAM LOW VOLTAGE MULTI-MEMORY PRODUCT | SGS-Thomson-Microelectronics | - | - | - | - | 252 K |
| M36W108AT | 8 MBIT (1MB X8, BOOT BLOCK) FLASH MEMORY AND 1 MBIT (128KB X8) SRAM LOW VOLTAGE MULTI-MEMORY PRODUCT | SGS-Thomson-Microelectronics | - | - | - | - | 252 K |
| M36W108T | 8 MBIT (1MB X8, BOOT BLOCK) FLASH MEMORY AND 1 MBIT (128KB X8) SRAM LOW VOLTAGE MULTI-MEMORY PRODUCT | SGS-Thomson-Microelectronics | - | - | - | - | 247 K |
| STW10NB60 | N-CHANNEL 600V - 0.69 OHM - 10A - TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 93 K |
| STW10NC60 | N-CHANNEL 6OOV - 0.65 OHM - 10A - TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 57 K |
| W10G | 1.5 Ampere Glass Passivated Bridge Rectifiers | Fairchild-Semiconductor | - | - | - | - | 163 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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