Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BPW21R | Photo Darlington transistor for optical sensors with high sensitivity | Vishay-Telefunken | TO 5 | - | - | - | 73 K |
FW214 | N-channel silicon MOS FET, ultrahigh-speed switching application | SANYO-Electric-Co--Ltd- | SOP8 | 8 | - | - | 46 K |
MGW21N60ED | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 152 K |
MGW21N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 152 K |
MJW21191 | Complementary silicon plastic power transistor | Motorola | - | 3 | -65°C | 150°C | 150 K |
MJW21191 | Transistor,PNP AUDIO Output | ON-Semiconductor | - | 3 | - | - | 150 K |
MJW21192 | Complementary silicon plastic power transistor | Motorola | - | 3 | -65°C | 150°C | 150 K |
MJW21192 | Transistor,NPN COMP Audio Output | ON-Semiconductor | - | 3 | - | - | 150 K |
W210H | Spread Spectrum FTG for VIA K7 Chipset | Cypress-Semiconductor | - | - | - | - | 162 K |
W216H | Spread Spectrum FTG for 440BX and VIA Apollo Pro-133 | Cypress-Semiconductor | - | - | - | - | 154 K |
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