| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCW33LT1 | 20 V, general purpose transistor | distributor | - | 3 | -55°C | 150°C | 265 K |
| BCW33LT1 | NPN silicon general purpose transistor | Motorola | - | 3 | -55°C | 150°C | 371 K |
| BCW33LT1 | General Purpose Transistor NPN | ON-Semiconductor | - | 3 | - | - | 261 K |
| BCW33LT3 | General Purpose Transistor NPN | ON-Semiconductor | - | 3 | - | - | 261 K |
| MTW33N10E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 227 K |
| RQ5RW33AA-TR | Voltage regulator IC. Output voltage 3.3V. L active type. Taping type TR | distributor | - | 4 | -40°C | 85°C | 173 K |
| RQ5RW33BA-TR | Voltage regulator IC. Output voltage 3.3V. H active type. Taping type TR | distributor | - | 4 | -40°C | 85°C | 173 K |
| RQ5RW33BA-TR | Voltage regulator IC. Output voltage 3.3V. H active type. Taping type TR | distributor | - | 4 | -40°C | 85°C | 173 K |
| RQ5RW33BB | Voltage regulator IC. Output voltage 3.3V. H active type. Antistatic bag (for sample only) | distributor | - | 4 | -40°C | 85°C | 173 K |
| STW33N20 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 115 K |
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