| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 15KW36A | 36.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
| 20KW36A | 36.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
| 30KW36A | 36.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 166 K |
| GS8170LW36C-250 | 250MHz 512K x 36 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW36C-250I | 250MHz 512K x 36 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
| GS8170LW36C-300 | 300MHz 512K x 36 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW36C-300I | 300MHz 512K x 36 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
| GS8170LW36C-333 | 333MHz 512K x 36 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW36C-333I | 333MHz 512K x 36 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
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