| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 15KW45A | 45.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
| 30KW45A | 45.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 166 K |
| AQW454 | PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Through hole terminal. | distributor | DIP | 8 | -40°C | 85°C | 44 K |
| IW4503BN | Hex buffer, high-voltage silicon-gate CMOS | distributor | Plastic DIP | 16 | -55°C | 125°C | 176 K |
| IW4516BD | Presettable up/down counter, high-voltage silicon-gate CMOS | distributor | SOIC | 16 | -55°C | 125°C | 284 K |
| IW4516BN | Presettable up/down counter, high-voltage silicon-gate CMOS | distributor | Plastic DIP | 16 | -55°C | 125°C | 284 K |
| IW4518BD | Dual up-counter, high-voltage silicon-gate CMOS | distributor | SOIC | 16 | -55°C | 125°C | 229 K |
| IW4518BN | Dual up-counter, high-voltage silicon-gate CMOS | distributor | Plastic DIP | 16 | -55°C | 125°C | 229 K |
| IW4518BN | Dual up-counter, high-voltage silicon-gate CMOS | distributor | Plastic DIP | 16 | -55°C | 125°C | 229 K |
| PHW45NQ10T | 100 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 110 K |
| [1] [2] [3] [4] 5 [6] |
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