Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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30KW66A | 66.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 166 K |
BCW66G | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | - | - | - | 46 K |
BCW66H | Ic=800mA, Vce=1.0V transistor | distributor | - | - | - | - | 90 K |
BCW66H | NPN silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 39 K |
BCW66H | NPN silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 39 K |
BCW66HR | NPN silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 39 K |
BCW66HR | NPN silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 39 K |
BSW66A | 100 V, NPN switching transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 53 K |
KIC7W66FK | Dual Analog Switch | Korea-Electronics-Co--Ltd- | - | - | - | - | 444 K |
W6692 | PCI bus ISDN S/T-controller | Winbond-Electronics | QFP | 100 | 0°C | 70°C | 515 K |
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