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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BYW81G-200HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESSGS-Thomson-Microelectronics----271 K
M5M5W816WG-10H8388608-bit (524288-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-480°C70°C87 K
M5M5W816WG-10HI8388608-bit (524288-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C87 K
M5M5W816WG-10L8388608-bit (524288-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-480°C70°C87 K
M5M5W816WG-10LI8388608-bit (524288-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C87 K
M5M5W816WG-85HI8388608-bit (524288-word by 16-bit) SMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C102 K
M5M5W816WG-85HI8388608-bit CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-GroupCSP10-40°C85°C102 K
M5M5W816WG-85L8388608-bit (524288-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-480°C70°C87 K
M5M5W816WG-85LI8388608-bit (524288-word by 16-bit) CMOS static RAMMitsubishi-Electric-Corporation-Semiconductor-Group-48-40°C85°C87 K
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