| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| A23W9308 | 120ns/5.0V; 150ns/3.0V 254,288 x 8bit CMOS MASK ROM | distributor | DIP | 32 | 0°C | 70°C | 190 K |
| A23W9308H | 120ns/5.0V; 150ns/3.0V 254,288 x 8bit CMOS MASK ROM | distributor | DICE | - | 0°C | 70°C | 190 K |
| A23W9308L | 120ns/5.0V; 150ns/3.0V 254,288 x 8bit CMOS MASK ROM | distributor | PLCC | 32 | 0°C | 70°C | 190 K |
| A23W9308M | 120ns/5.0V; 150ns/3.0V 254,288 x 8bit CMOS MASK ROM | distributor | SOP | 32 | 0°C | 70°C | 190 K |
| BDW93A | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 39 K |
| BDW93A | 12Ampere darlington complementary silicon power transistor | distributor | - | 3 | -65°C | 150°C | 183 K |
| BDW93B | hfe min 750 Transistor polarity NPN Voltage Vceo 80 V Current Ic av. 12 A Current Ic (hfe) 5 A Power Ptot 80 W Temperature power 25 ?C Transistors number of 1 | SGS-Thomson-Microelectronics | - | - | - | - | 80 K |
| BDW93C | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 39 K |
| BDW93CF | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 41 K |
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