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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MH1M365CXJ-537748736-bit (1048576-word by 36-bit) DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ720°C70°C215 K
MH1M365CXJ-637748736-bit (1048576-word by 36-bit) DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ720°C70°C215 K
MH1M365CXJ-737748736-bit (1048576-word by 36-bit) DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ720°C70°C215 K
MH2M365CXJ-575497472-bit (2097152-word by 36-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ720°C70°C226 K
MH2M365CXJ-675497472-bit (2097152-word by 36-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupSOJ720°C70°C226 K
MH4S644AWXJ-6Fast page mode 268435456-bit (4194304- word by 64-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C171 K
MH4S64AWXJ-5Fast page mode 268435456-bit (4194304- word by 64-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C170 K
MH4S64AWXJ-6Fast page mode 268435456-bit (4194304- word by 64-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C170 K
MH4V724AWXJ-5Fast page mode 301989888-bit (4194304- word by 72-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C174 K
MH4V724AWXJ-6Fast page mode 301989888-bit (4194304- word by 72-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C174 K
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