| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BGY120B | 3.5 V, UNF amplifier module | Philips-Semiconductors | SOT | 5 | -30°C | 100°C | 45 K |
| BGY122A | 4.8 V, UNF amplifier module | Philips-Semiconductors | SOT | 4 | -30°C | 100°C | 97 K |
| BGY122A | 4.8 V, UNF amplifier module | Philips-Semiconductors | SOT | 4 | -30°C | 100°C | 97 K |
| BGY122B | 4.8 V, UNF amplifier module | Philips-Semiconductors | SOT | 4 | -30°C | 100°C | 97 K |
| BY127 | General purpose plastic rectifier. Maximum recurrent peak reverse voltage 1250 V. Maximum average forward rectified current 1.0 A. | distributor | - | 2 | -60°C | 125°C | 126 K |
| BY127 | 1250 V, 1 A, General purpose plastic rectifier | distributor | DO | 2 | -55°C | 150°C | 169 K |
| BY127 | 1250 V, 1 A high voltage silicon rectifier | distributor | - | 2 | -50°C | 175°C | 81 K |
| BY127M | Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 1250 V. Maximum average forward rectified current 1.0 A. | distributor | - | 2 | -65°C | 150°C | 151 K |
| BY127M | Plastic silicon rectifier. Max recurrent peak reverse voltage 1250 V. Max average forward rectified current 1.0 A. | distributor | - | 2 | -55°C | 150°C | 51 K |
| IRFY120 | 100V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 14 K |
| ZY120 | 114-127V silicon power zener diode | distributor | - | 2 | -55°C | 150°C | 63 K |
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