| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 3D7303Z-25 | Delay 25 +/-1 ns, monolithic triple fixed delay line | distributor | SOIC | 8 | 0°C | 70°C | 39 K |
| LM385Z-2.5 | Micropower voltage reference diode. Low voltage reference 2.5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | 0°C | 70°C | 147 K |
| RM250CZ-2H | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
| RM250DZ-24 | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
| RM250DZ-2H | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
| RM500DZ-24 | 800A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 51 K |
| RM500DZ-2H | 800A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 51 K |
| RM500UZ-24 | 800A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 51 K |
| RM500UZ-2H | 800A - transistor module for high power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 51 K |
| WS336Z-2.5 | Programmable shunt regulator. 2.5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | 0°C | 70°C | 65 K |
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