Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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3EZ180 | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 180 V. Izt = 4.2 mA. | distributor | - | 2 | -55°C | 150°C | 461 K |
3EZ180 | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 180 V. Izt = 4.2 mA. | distributor | - | 2 | -55°C | 150°C | 461 K |
GS8160Z18T-166 | 7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 770 K |
GS8160Z18T-200 | 6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 770 K |
GS8160Z18T-225 | 6ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 770 K |
GS8160Z18T-250 | 5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 770 K |
M48Z18-100MH6TR | CMOS 8K x 8 zeropower SRAM, 100ns | SGS-Thomson-Microelectronics | SOH | 28 | -40°C | 85°C | 503 K |
M48Z18-100MH6TR | CMOS 8K x 8 zeropower SRAM, 100ns | SGS-Thomson-Microelectronics | SOH | 28 | -40°C | 85°C | 503 K |
M48Z18-100PC1 | CMOS 8K x 8 zeropower SRAM, 100ns | SGS-Thomson-Microelectronics | PCDIP | 28 | 0°C | 70°C | 503 K |
M48Z18-100PC6 | CMOS 8K x 8 zeropower SRAM, 100ns | SGS-Thomson-Microelectronics | PCDIP | 28 | -40°C | 85°C | 503 K |
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