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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
3EZ180Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 180 V. Izt = 4.2 mA.distributor-2-55°C150°C461 K
3EZ180Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 180 V. Izt = 4.2 mA.distributor-2-55°C150°C461 K
GS8160Z18T-1667ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAMdistributorTQFP100-40°C85°C770 K
GS8160Z18T-2006.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAMdistributorTQFP100-40°C85°C770 K
GS8160Z18T-2256ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAMdistributorTQFP100-40°C85°C770 K
GS8160Z18T-2505.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAMdistributorTQFP100-40°C85°C770 K
M48Z18-100MH6TRCMOS 8K x 8 zeropower SRAM, 100nsSGS-Thomson-MicroelectronicsSOH28-40°C85°C503 K
M48Z18-100MH6TRCMOS 8K x 8 zeropower SRAM, 100nsSGS-Thomson-MicroelectronicsSOH28-40°C85°C503 K
M48Z18-100PC1CMOS 8K x 8 zeropower SRAM, 100nsSGS-Thomson-MicroelectronicsPCDIP280°C70°C503 K
M48Z18-100PC6CMOS 8K x 8 zeropower SRAM, 100nsSGS-Thomson-MicroelectronicsPCDIP28-40°C85°C503 K
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