Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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CM300HA-12H | 300 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -10°C | 75°C | 43 K |
CM400HA-12H | 400 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 43 K |
CM600HA-12H | 600 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 45 K |
E28F008SA-120 | 8-Mbit(1-Mbit x 8) flashfile memory. Access speed 120 ns | Intel-Corporation | TSOP | 40 | 0°C | 70°C | 466 K |
E28F016SA-120 | 16-Mbit(1 Mbit x 16, 2 Mbit x 8) flashfile memory. Access speed 120 ns, Vcc = 3.3 V, 50 pF load | Intel-Corporation | TSOP | 56 | 0°C | 70°C | 840 K |
F28F008SA-120 | 8-Mbit(1-Mbit x 8) flashfile memory. Access speed 120 ns | Intel-Corporation | TSOP | 40 | 0°C | 70°C | 466 K |
PA28F008SA-120 | 8-Mbit(1-Mbit x 8) flashfile memory. Access speed 120 ns | Intel-Corporation | PSOP | 44 | 0°C | 70°C | 466 K |
SCA-12 | DC-4 GHz, cascadable GaAs HBT MMIC amplifier. High output IP3: 35 dBm @ 850M Hz | distributor | - | 4 | -40°C | 85°C | 540 K |
SGA-1263 | DC-4000 MHz, 2.8V silicon germanium HBT cascadeable gain block | distributor | - | 6 | -40°C | 85°C | 329 K |
SPA-1218 | 1960 MHz 1 watt power amplifier with active bias. | distributor | SOIC | 8 | -40°C | 85°C | 208 K |
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