| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ACT-F2M32A-120F18C | High speed 64 Megabit sector erase FLASH multichip module. Speed 120ns. | distributor | CQFP | 68 | 0°C | 70°C | 92 K |
| ACT-F2M32A-120F18I | High speed 64 Megabit sector erase FLASH multichip module. Speed 120ns. | distributor | CQFP | 68 | -40°C | 85°C | 92 K |
| ACT-F2M32A-120F18M | High speed 64 Megabit sector erase FLASH multichip module. Speed 120ns. | distributor | CQFP | 68 | -55°C | 125°C | 92 K |
| ACT-F2M32A-120F18Q | High speed 64 Megabit sector erase FLASH multichip module. Speed 120ns. | distributor | CQFP | 68 | -55°C | 125°C | 92 K |
| MT5C1008ECA-12L/883C | 128K x 8 SRAM with dual chip enable | distributor | LCC | 32 | -55°C | 125°C | 241 K |
| MT5C1008ECA-12L/IT | 128K x 8 SRAM with dual chip enable | distributor | LCC | 32 | -40°C | 85°C | 241 K |
| MT5C1008ECA-12L/XT | 128K x 8 SRAM with dual chip enable | distributor | LCC | 32 | -55°C | 125°C | 241 K |
| MX29F200BTA-12 | Access time: 120ns; 2M-bit (256K x 8/128K x 16) CMOS flash memory | distributor | TSOP | 48 | -40°C | 85°C | 720 K |
| MX29F400TTA-12 | Access time: 120ns; 4M-bit (512K x 8/256K x 16) CMOS flash memory | distributor | TSOP | 48 | -40°C | 85°C | 710 K |
| SMJ27C010A-12JM | 1Meg UVEPROM; UV erasable programmable read-only memory | distributor | DIP | 32 | -55°C | 125°C | 131 K |
| SMJ27C010A-12JM | 1Meg UVEPROM; UV erasable programmable read-only memory | distributor | DIP | 32 | -55°C | 125°C | 131 K |
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