| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1016 | PNP epitaxial planar silicon transistor, high voltag, low-noise amp application | SANYO-Electric-Co--Ltd- | 2003A | 3 | - | - | 127 K |
| FXA1013 | Frame Transfer CCD Image Sensor | Philips-Semiconductors | - | - | - | - | 2 M |
| KRA101M | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (4.7 kOm and 4.7 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 595 K |
| KRA101S | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (4.7 kOm and 4.7 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 599 K |
| TZA1015T/N3 | Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS) | Philips-Semiconductors | SOT136 | - | - | - | 100 K |
| TZA1015T/N4 | Data amplifier and laser supply circuit for CD and read-only optical systems (HDALAS) | Philips-Semiconductors | SOT136 | - | - | - | 100 K |
| UMA1014T/C2 | Low-power frequency synthesizer for mobile radio communications | Philips-Semiconductors | SOT109 | - | - | - | 90 K |
| UMA1015AM/C1 | Low-power dual frequency synthesizer for radio communications | Philips-Semiconductors | SOT266 | - | - | - | 159 K |
| UMA1017M/C1 | Low-voltage frequency synthesizer for radio telephones | Philips-Semiconductors | SOT266 | - | - | - | 171 K |
| UMA1017M/C2 | Low-voltage frequency synthesizer for radio telephones | Philips-Semiconductors | SOT266 | - | - | - | 171 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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