| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1011 | PNP epitaxial planar silicon transistor, high-voltag switching, AF power amp, 100W output predriver application | SANYO-Electric-Co--Ltd- | 2010C | 3 | - | - | 90 K |
| 2SA1018 | Small signal silicon PNP transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 36 K |
| AA101 | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 128 K |
| CNA1015 | Photo Interrupters | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| GA101 | Silicon Controlled Rectifier | Microsemi-Corporation | - | - | - | - | 202 K |
| MA1010 | Power switching regulator | Shindengen-Electric-Manufacturing-Company-Ltd- | - | - | - | - | 596 K |
| UPA101B | Ultra-high-frequency NPN transistor array | NEC-Electronics-Inc- | - | - | - | - | 61 K |
| UPA101G | Ultra-high-frequency NPN transistor array | NEC-Electronics-Inc- | - | - | - | - | 61 K |
| UPA101G-E1 | Ultra-high-frequency NPN transistor array | NEC-Electronics-Inc- | - | - | - | - | 61 K |
| UPA101P | Ultra-high-frequency NPN transistor array | NEC-Electronics-Inc- | - | - | - | - | 61 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
|---|
