Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BA5204F | Dual power amplifier (3V/35mW) | ROHM | - | | - | - | 149 K |
SA5200D | 9 V, RF dual gain-stage | Philips-Semiconductors | SO | 8 | -40°C | 85°C | 375 K |
SA5204AN | Wide-band high-frequency amplifier | Philips-Semiconductors | NE | - | - | - | 116 K |
SA5205AN | Wide-band high-frequency amplifier | Philips-Semiconductors | NE | - | - | - | 114 K |
SA5209D | Wideband variable gain amplifier | Philips-Semiconductors | SOT109 | - | - | - | 202 K |
SA5209N | Wideband variable gain amplifier | Philips-Semiconductors | SOT38 | - | - | - | 202 K |
TSHA5200 | High performance GaAlAs 870 nm IR emitter diode | Vishay-Telefunken | - | - | - | - | 89 K |
TSHA5201 | High performance GaAlAs 870 nm IR emitter diode | Vishay-Telefunken | - | - | - | - | 89 K |
TSHA5202 | High performance GaAlAs 870 nm IR emitter diode | Vishay-Telefunken | - | - | - | - | 89 K |
TSHA5203 | High performance GaAlAs 870 nm IR emitter diode | Vishay-Telefunken | - | - | - | - | 89 K |
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