| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AD7891AP-1 | 0.3-7V; 450mW; LC2MOS 8-channel, 12-bit high speed, data acquisition system. For data acquisition systems, motor control, mobile communication base stations, instrumenatation | Analog-Devices | PLCC | 44 | -40°C | 85°C | 205 K |
| HM62256AP-10 | 32,768-word x 8-bit high speed CMOS static RAM, 100ns | distributor | DIP | 28 | 0°C | 70°C | 71 K |
| HM62256AP-12 | 32,768-word x 8-bit high speed CMOS static RAM, 120ns | distributor | DIP | 28 | 0°C | 70°C | 71 K |
| HM62256AP-15 | 32,768-word x 8-bit high speed CMOS static RAM, 150ns | distributor | DIP | 28 | 0°C | 70°C | 71 K |
| HN27C256AP-15 | 256K (32K x 8-bit) UV and OTP EPROM, 150ns | distributor | PDIP | 28 | 0°C | 70°C | 416 K |
| JQ1aP-18V | JQ-relay. High electrical and mechanical noise immunity relay. 1 form A. Coil voltage 18 V DC. High contact capacity. Class E coil insulation. | distributor | - | 4 | -40°C | 85°C | 107 K |
| JV1aP-100V | JV-relay. Flat type power relay. 1 form A, hing capacity type. Coil voltage 100 V DC. Sealed type. | distributor | - | 5 | -40°C | 70°C | 60 K |
| KM41256AP-10 | 256K x 1-bit DRAM, 100ns | Samsung-Electronic | DIP | 16 | 0°C | 70°C | 988 K |
| KM41256AP-12 | 256K x 1-bit DRAM, 120ns | Samsung-Electronic | DIP | 16 | 0°C | 70°C | 988 K |
| KM41256AP-15 | 256K x 1-bit DRAM, 150ns | Samsung-Electronic | DIP | 16 | 0°C | 70°C | 988 K |
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