| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT-30511-BLK | Low current, high performance NPN silicon bipolar transistor | distributor | - | 4 | - | - | 101 K |
| AT-30511-TR1 | Low current, high performance NPN silicon bipolar transistor | distributor | - | 4 | - | - | 101 K |
| AT-30533-BLK | Low current, high performance NPN silicon bipolar transistor | distributor | - | 4 | - | - | 101 K |
| AT-30533-TR1 | Low current, high performance NPN silicon bipolar transistor | distributor | - | 4 | - | - | 101 K |
| AT-31011-BLK | Low current, high performance NPN silicon bipolar transistor | distributor | - | 4 | - | - | 137 K |
| AT-31033-BLK | Low current, high performance NPN silicon bipolar transistor | distributor | - | 4 | - | - | 137 K |
| AT-31033-TR1 | Low current, high performance NPN silicon bipolar transistor | distributor | - | 4 | - | - | 137 K |
| AT-332 | DC-2 GHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | TO | 8 | -55°C | 125°C | 114 K |
| AT-357SMA | DC-2 GHz, 31 dB , 5-Bit GaAs digital attenuator | M-A-COM---manufacturer-of-RF | - | - | -55°C | 125°C | 34 K |
| AT-358 | 0.02-2 GHz, 10 dB , 1-Bit GaAs digital attenuator | M-A-COM---manufacturer-of-RF | - | 12 | -55°C | 125°C | 53 K |
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