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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
STB200NF03N-CHANNEL 30V - 0.0032 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----557 K
STB200NF03-1N-CHANNEL 30V - 0.0032 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----557 K
T10B200BT10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 170V,max. Ir = 50uA @ Vr = 200V,max, Bulk (500pcs).distributor-2-40°C150°C70 K
Z2SMB200200 V, 5 mA, 2 W surface mounted glass passivated zener diodedistributorSMB2-65°C175°C63 K
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