| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUZ90 | N-channel SIPMOS power transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 176 K |
| BUZ900 | N-channel power MOSFET for audio applications, 160V | distributor | - | 3 | -55°C | 150°C | 39 K |
| BUZ900D | N-channel power MOSFET for audio applications, 160V | distributor | - | 3 | -55°C | 150°C | 40 K |
| BUZ900DP | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. | distributor | - | 3 | 0°C | 150°C | 39 K |
| BUZ900P | N-channel power MOSFET for audio applications, 160V | distributor | - | 3 | -55°C | 150°C | 38 K |
| BUZ901 | N-channel power MOSFET for audio applications, 200V | distributor | - | 3 | -55°C | 150°C | 39 K |
| BUZ901D | N-channel power MOSFET for audio applications, 200V | distributor | - | 3 | -55°C | 150°C | 40 K |
| BUZ901DP | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. | distributor | - | 3 | 0°C | 150°C | 39 K |
| BUZ901P | N-channel power MOSFET for audio applications, 200V | distributor | - | 3 | -55°C | 150°C | 38 K |
| BUZ90A | N-channel SIPMOS power transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 175 K |
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