| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFBC40AS | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 111 K |
| IRFBC40L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | - | 3 | -55°C | 150°C | 350 K |
| IRFBC40L | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | - | 3 | -55°C | 150°C | 350 K |
| IRFBC40S | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 350 K |
| IRFIBC40G | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 3.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 170 K |
| IRFIBC40GLC | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 3.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 229 K |
| IRG4BC40 | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A | International-Rectifier | - | 3 | -55°C | 150°C | 167 K |
| IRG4BC40K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.1V @ VGE = 15V, IC = 25A | International-Rectifier | - | 3 | -55°C | 150°C | 156 K |
| IRG4BC40S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.32V @ VGE = 15V, IC = 31A | International-Rectifier | - | 3 | -55°C | 150°C | 157 K |
| IRG4BC40U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
| IRG4BC40U | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A | International-Rectifier | - | 3 | -55°C | 150°C | 169 K |
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