| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BD241 | 45 V, complementary NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 139 K |
| BD241 | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 97 K |
| BD241A | 60 V, complementary NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 139 K |
| BD241A | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 97 K |
| BD241A | NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W | distributor | - | 3 | -65°C | 150°C | 47 K |
| BD241B | 4mW NPN silicon epitaxial base power transistor | distributor | - | 3 | -55°C | 150°C | 97 K |
| BD241B | 90 V, NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 432 K |
| BD241B | NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W | distributor | - | 3 | -65°C | 150°C | 47 K |
| BD241C | 115 V, NPN silicon power transistor | distributor | - | 3 | -65°C | 150°C | 432 K |
| BD241C | NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W | distributor | - | 3 | -65°C | 150°C | 47 K |
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