| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BDX53 | 8Ampere darlington complementary silicon power transistor | distributor | - | 3 | -65°C | 150°C | 187 K |
| BDX53 | NPN epitaxial silicon transistor. Collector-base voltage 45V. Collector-emitter voltage 45V. Emitter-base voltage 5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 21 K |
| BDX53A | 8Ampere darlington complementary silicon power transistor | distributor | - | 3 | -65°C | 150°C | 187 K |
| BDX53A | NPN epitaxial silicon transistor. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 21 K |
| BDX53B | 8Ampere darlington complementary silicon power transistor | distributor | - | 3 | -65°C | 150°C | 187 K |
| BDX53B | NPN epitaxial silicon transistor. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 21 K |
| BDX53C | 8Ampere darlington complementary silicon power transistor | distributor | - | 3 | -65°C | 150°C | 187 K |
| BDX53C | NPN epitaxial silicon transistor. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 21 K |
| BDX54 | PNP epitaxial silicon transistor. Collector-base voltage -45V. Collector-emitter voltage -45V. Emitter-base voltage -5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 25 K |
| BDX54A | PNP epitaxial silicon transistor. Collector-base voltage -60V. Collector-emitter voltage -60V. Emitter-base voltage -5V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 25 K |
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