| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| SMTBJ100A | SMTBJ SiBOD, bi-directional transient voltage protection. Vrm = 100V. Peak pulse current Ipp = 50A (10/1000usec), 150A (8-20us expo). | distributor | - | 2 | 0°C | 150°C | 81 K |
| SMTBJ100B | SMTBJ SiBOD, bi-directional transient voltage protection. Vrm = 100V. Peak pulse current Ipp = 100A (10/1000usec), 250A (8-20us expo). | distributor | - | 2 | 0°C | 150°C | 81 K |
| TSMBJ1006C | Bi-directional 100Amp, 60V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1006C | Bi-directional 100Amp, 60V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1007C | Bi-directional 100Amp, 70V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1009C | Bi-directional 100Amp, 90V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1010C | Bi-directional 100Amp, 100V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1012C | Bi-directional 100Amp, 120V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1014C | Bi-directional 100Amp, 140V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
| TSMBJ1024C | Bi-directional 100Amp, 240V, thyristor surge protective device | Microsemi-Corporation | - | 3 | -40°C | 150°C | 179 K |
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