| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSP106 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 77 K |
| BSP107 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 77 K |
| BSP110 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 76 K |
| BSP120 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 76 K |
| BSP122 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 58 K |
| BSP127 | 270 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 4 | - | - | 50 K |
| BSP127 | 270 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 4 | - | - | 50 K |
| BSP145 | 450 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 4 | - | - | 51 K |
| VND05BSP13TR | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | SGS-Thomson-Microelectronics | - | - | - | - | 226 K |
| VND10BSP13TR | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | SGS-Thomson-Microelectronics | - | - | - | - | 217 K |
| VND10BSP13TR | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | SGS-Thomson-Microelectronics | - | - | - | - | 217 K |
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