| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FMBT3904 | 60 V, 200 mA NPN epitaxial planar transistor | distributor | - | 3 | - | - | 36 K |
| FMBT3906 | 40 V, 200 mA PNP epitaxial planar transistor | distributor | - | 3 | - | - | 36 K |
| MMBT3904 | 40 V, general purpose transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 121 K |
| MMBT3904 | 40 V, general purpose transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 121 K |
| MMBT3904WT1 | General purpose transistor | Motorola | - | 3 | -55°C | 150°C | 296 K |
| MMBT3906 | 40 V, general purpose transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 107 K |
| MMBT3906 | 40 V, general purpose transistor NPN silicon | distributor | SOT | 3 | -55°C | 150°C | 107 K |
| MMBT3906WT1 | General purpose transistor | Motorola | - | 3 | -55°C | 150°C | 296 K |
| WMBT3904 | NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 66 K |
| WMBT3906 | PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 66 K |
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