| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HMBT5401 | Emitter to base voltage:5V; 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage | distributor | - | 3 | - | - | 30 K |
| MMBT5401 | 160V; 200mA PNP small signal surface mount transistor. Ideal for medium power application and switching | distributor | - | 3 | -55°C | 150°C | 47 K |
| MMBT5401 | 180 V, PNP small signal surface mount transistor | distributor | SOT | 3 | -55°C | 150°C | 171 K |
| MMBT5401 | 160 V, PNP small signal surface mount transistor | distributor | - | 3 | -55°C | 150°C | 171 K |
| MMBT5401 | 150 V, high voltage transistor PNP silicon | distributor | SOT | 3 | -55°C | 150°C | 83 K |
| MMBT5401 | 150 V, high voltage transistor PNP silicon | distributor | SOT | 3 | -55°C | 150°C | 83 K |
| MMBT5401LT1 | 150 V, high voltage transistor | distributor | - | 3 | -55°C | 150°C | 164 K |
| PMBT5401 | PNP high-voltage transistor. | Philips-Semiconductors | SOT23 | 3 | -65°C | 150°C | 47 K |
| PMBT5401 | PNP high-voltage transistor. | Philips-Semiconductors | SOT23 | 3 | -65°C | 150°C | 47 K |
| WMBT5401LT1 | PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 34 K |
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