| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BUZ900DP | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. | distributor | - | 3 | 0°C | 150°C | 39 K |
| BUZ900P | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. | distributor | TO247 | 3 | 0°C | 150°C | 38 K |
| BUZ900P | N-channel power MOSFET for audio applications, 160V | distributor | - | 3 | -55°C | 150°C | 38 K |
| BUZ900X4S | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. | distributor | SOT227 | 4 | 0°C | 150°C | 33 K |
| BUZ901DP | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. | distributor | - | 3 | 0°C | 150°C | 39 K |
| BUZ901P | N-channel power MOSFET for audio applications, 200V | distributor | - | 3 | -55°C | 150°C | 38 K |
| BUZ901P | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. | distributor | TO247 | 3 | 0°C | 150°C | 38 K |
| BUZ901X4S | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. | distributor | SOT227 | 4 | 0°C | 150°C | 33 K |
| BUZ902 | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. | distributor | - | 2 | 0°C | 150°C | 25 K |
| BUZ903 | N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V. | distributor | - | 2 | 0°C | 150°C | 25 K |
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