| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FB125-C1000G | 300 V, 1 A, fast recovery glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 125°C | 45 K |
| FB250-C1000G | 600 V, 1 A, fast recovery glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 125°C | 45 K |
| FB380-C1000G | 900 V, 1 A, fast recovery glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 125°C | 45 K |
| FB80-C1000G | 200 V, 1 A, fast recovery glass passivated bridge rectifier | distributor | WOB | 4 | -50°C | 125°C | 45 K |
| ITC1000 | 1000 W, 50 V, 1030 MHz common base transistor | distributor | 55SW | 3 | - | - | 50 K |
| KBPC10005 | Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 10.0 A. | distributor | KBPC10 | 4 | -55°C | 125°C | 145 K |
| KBPC10005 | 50 V, 10 A single-phase silicon bridge | distributor | - | 4 | -55°C | 125°C | 215 K |
| KBPC10005 | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 10.0 A. | distributor | KBPC10 | 4 | -55°C | 125°C | 14 K |
| KBPC1000S | 10A, 50V ultra fast recovery rectifier | distributor | KBPC | - | - | - | 79 K |
| KM416C1000BTL-7 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
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