| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KBPC102 | Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 3.0 A. | distributor | - | 4 | -55°C | 125°C | 129 K |
| KBPC102 | 200 V, 3 A, bridge rectifier | distributor | BR | 4 | - | - | 48 K |
| KBPC102 | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 3.0 A. | distributor | - | 4 | -55°C | 125°C | 15 K |
| KBPC102 | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 3.0 A. | distributor | - | 4 | -55°C | 125°C | 15 K |
| P3C1024 | 3.3 V static CMOS RAM, 128 K x 8 high speed | distributor | DIP | 32 | - | - | 45 K |
| TC1029CPA | Linear building block - dual low power operational amplifier. | TelCom-Semiconductor-Inc- | Plastic DIP | 8 | 0°C | 70°C | 25 K |
| TC1029CUA | Linear building block - dual low power operational amplifier. | TelCom-Semiconductor-Inc- | MSOP | 8 | 0°C | 70°C | 25 K |
| TC1029EOA | Linear building block - dual low power operational amplifier. | TelCom-Semiconductor-Inc- | SOIC | 8 | -40°C | 85°C | 25 K |
| TC1029EPA | Linear building block - dual low power operational amplifier. | TelCom-Semiconductor-Inc- | Plastic DIP | 8 | -40°C | 85°C | 25 K |
| TC1029EUA | Linear building block - dual low power operational amplifier. | TelCom-Semiconductor-Inc- | MSOP | 8 | -40°C | 85°C | 25 K |
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