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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BC337Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current Ic = 800mA.distributor-30°C150°C46 K
BC338Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Vces = 30V, Vceo= 25V, Vebo = 5V, Pc = 625mW, Ic = 800mA.distributor-30°C150°C46 K
BZX79C33RL500 milliwatts glass silicon zener diode, zener voltage 33VMotorola-2-65°C200°C424 K
SMC33C26.8V, 31.5A surface mount transient voltage suppressordistributorSMC2-55°C150°C50 K
SMC33CA28.2V, 33A surface mount transient voltage suppressordistributorSMC2-55°C150°C50 K
V54C333322V3.3V ultra-high performance 1M x 32 SDRAM 2 banks x 512Kbit x 32Mosel-VitelicTQFP1000°C70°C124 K
V54C333322V3.3V 4M x 16 SDRAM 4 banks x 1Mbit x 16Mosel-VitelicTSOP540°C70°C1 M
V54C333322V-53.3V ultra-high performance 1M x 32 SDRAM 2 banks x 512Kbit x 32Mosel-VitelicTQFP1000°C70°C124 K
V54C333322V-553.3V ultra-high performance 1M x 32 SDRAM 2 banks x 512Kbit x 32Mosel-VitelicTQFP1000°C70°C124 K
V54C333322V-63.3V ultra-high performance 1M x 32 SDRAM 2 banks x 512Kbit x 32Mosel-VitelicTQFP1000°C70°C124 K
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