| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CC410899A | 800V, 100A general purpose common cathode diode | distributor | - | - | - | - | 105 K |
| KM416C4100BS-45 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 45ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 826 K |
| TC54VC4101ECB | Voltage detector. Detected voltage 4.1V. Output form: CMOS output. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VC4101ECTTR | Voltage detector, CMOS output, 4.1V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VC4101ECTTR | Voltage detector, CMOS output, 4.1V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VC4101EMB | Voltage detector. Detected voltage 4.1V. Output form: CMOS output. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VC4101EZB | Voltage detector. Detected voltage 4.1V. Output form: CMOS output . Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VC4102ECB | Voltage detector. Detected voltage 4.1V. Output form: CMOS output. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VC4102EMB | Voltage detector. Detected voltage 4.1V. Output form: CMOS output. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VC4102EZB | Voltage detector. Detected voltage 4.1V. Output form: CMOS output . Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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