| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC5407 | NPN transistor for horizontal deflection output | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | 3 | -55°C | 150°C | 36 K |
| IRC540 | HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm | International-Rectifier | - | 5 | -55°C | 175°C | 222 K |
| TC54VC5401ECB | Voltage detector. Detected voltage 5.4V. Output form: CMOS output. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VC5401ECBTR | Voltage detector, CMOS output, 5.4V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VC5401ECTTR | Voltage detector, CMOS output, 5.4V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VC5401ECTTR | Voltage detector, CMOS output, 5.4V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VC5401EMB | Voltage detector. Detected voltage 5.4V. Output form: CMOS output. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VC5401EMBTR | Voltage detector, CMOS output, 5.4V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VC5402ECB | Voltage detector. Detected voltage 5.4V. Output form: CMOS output. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VC5402EMB | Voltage detector. Detected voltage 5.4V. Output form: CMOS output. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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