Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
28C64ATM-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | distributor | TSOP | 28 | -55°C | 125°C | 42 K |
28C64ATM-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | TSOP | 28 | -55°C | 125°C | 42 K |
28C64ATM-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | -55°C | 125°C | 42 K |
IS61C64AH-15J | 15ns; 5V; 8K x 8 high-speed CMOS static RAM | distributor | SOJ | 28 | 0°C | 70°C | 433 K |
IS61C64AH-15U | 15ns; 5V; 8K x 8 high-speed CMOS static RAM | distributor | SOP | 28 | 0°C | 70°C | 433 K |
IS61C64AH-20J | 20ns; 5V; 8K x 8 high-speed CMOS static RAM | distributor | SOJ | 28 | 0°C | 70°C | 433 K |
IS61C64AH-20U | 20ns; 5V; 8K x 8 high-speed CMOS static RAM | distributor | SOP | 28 | 0°C | 70°C | 433 K |
IS61C64AH-25J | 25ns; 5V; 8K x 8 high-speed CMOS static RAM | distributor | SOJ | 28 | 0°C | 70°C | 433 K |
IS61C64AH-25U | 25ns; 5V; 8K x 8 high-speed CMOS static RAM | distributor | SOP | 28 | 0°C | 70°C | 433 K |
KM28C64A-12 | 8K x 8 bit CMOS electrically erasable PROM, 120ns | Samsung-Electronic | PLCC | 32 | 0°C | 70°C | 364 K |
<< [16] [17] [18] [19] [20] 21 [22] [23] [24] [25] [26] >> |
---|