| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BD135 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 41 K |
| BD135 | Plastic medium power silicon NPN transistor | Motorola | - | 3 | -55°C | 150°C | 100 K |
| BD135 | NPN power transistor. | Philips-Semiconductors | - | 3 | -65°C | 150°C | 57 K |
| BD135 | NPN power transistor. | Philips-Semiconductors | SOT32 | 3 | -65°C | 150°C | 57 K |
| GL1HD135 | Mini-mold LED lamp | Sharp | - | 2 | -25°C | 85°C | 99 K |
| GL1HD135 | 2mm, forming type, colored diffusion, compact LED lamp for backlight/indicator | Sharp | __ | 2 | -25°C | 85°C | 99 K |
| MD1352 | Ultra high sensivity gateable photomultiplier DC-module. 1/2 inche DC photosensor module. Window material quartz. Dark current/offset voltage 40pA/2mV @ 1 x 10^6 gain & 1V/20nA. | distributor | - | 5 | 5°C | 40°C | 357 K |
| MD1353 | Ultra high sensivity gateable photomultiplier DC-module. 1/2 inche DC photosensor module. Window material UV glass. Dark current/offset voltage 40pA/2mV @ 1 x 10^6 gain & 1V/20nA. | distributor | - | 5 | 5°C | 40°C | 357 K |
| PVD1352 | BOSFET photovoltaic relay | International-Rectifier | DIP | 8 | -40°C | 85°C | 311 K |
| PVD1354 | BOSFET photovoltaic relay | International-Rectifier | DIP | 8 | -40°C | 85°C | 311 K |
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