Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SD2352 | Silicon NPN transistor for power amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 182 K |
2SD2353 | Silicon NPN transistor for power amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 181 K |
2SD2357 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 36 K |
2SD2358 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 45 K |
2SD2359 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 35 K |
BD235 | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 75 K |
FAR-F5CE-947M50-D235-W | Piezoelectric SAW BPF (700 to 1000 MHz) | Fujitsu-Microelectronis | SMT | 6 | -30°C | 85°C | 198 K |
FAR-F5CE-947M50-D235-V | Piezoelectric SAW BPF(700 to 1000 MHz) | Fujitsu-Microelectronis | SMT | 6 | -30°C | 85°C | 198 K |
FAR-F5CE-947M50-D235-U | Piezoelectric SAW BPF(700 to 1000 MHz) | Fujitsu-Microelectronis | SMT | 6 | -30°C | 85°C | 198 K |
PVD2352 | BOSFET photovoltaic relay | International-Rectifier | DIP | 8 | -40°C | 85°C | 303 K |
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