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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KTD3055NPN transistor for high power amplifier applicationsKorea-Electronics-Co--Ltd--3-55°C150°C261 K
MJD3055Complementary power transistorMotorola-4-65°C150°C202 K
MJD3055Complementary Power TransistorsON-SemiconductorDPAK3--147 K
MJD3055COMPLEMENTARY SILICON POWER TRANSISTORSSGS-Thomson-Microelectronics----91 K
MJD3055T4Complementary Power TransistorsON-SemiconductorDPAK3--147 K
MTD3055V N-Channel Enhancement Mode Field Effect TransistorFairchild-Semiconductor----380 K
RFD305512A, 60V, 0.150 Ohm, N-Channel Power MOSFETsIntersil-Corporation----82 K
RFD3055LE11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETsIntersil-Corporation----86 K
RFD3055LESM11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETsIntersil-Corporation----86 K
RFD3055SM12A, 60V, 0.150 Ohm, N-Channel Power MOSFETsIntersil-Corporation----82 K
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