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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416C254DT-5256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh periodSamsung-ElectronicTSOP II400°C70°C840 K
KM416C256DT-5256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5VSamsung-ElectronicTSOP II400°C70°C83 K
KM416V254DT-5256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh periodSamsung-ElectronicTSOP II400°C70°C840 K
KM416V256DT-5256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3VSamsung-ElectronicTSOP II400°C70°C83 K
KM41C4000DT-54M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50nsSamsung-ElectronicTSOP II200°C70°C340 K
LP2950ACDT-5.0Micropower Voltage RegulatorON-SemiconductorDPAK3--289 K
LP2950ACDT-5.0RKMicropower Voltage RegulatorON-SemiconductorDPAK3--289 K
LP2950CDT-5.0Micropower Voltage RegulatorON-SemiconductorDPAK3--289 K
LP2950CDT-5RKMicropower Voltage RegulatorON-Semiconductor----289 K
MC33269DT-5.0Low dropout posltlve flxed and adjustable voltage regulatorMotorolaDPAK3-40°C125°C188 K
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